发明名称 NITRIDE SEMICONDUCTOR LASER ELEMENT AND MANUFACTURING METHOD OF THE RESONANCE SURFACE
摘要 PROBLEM TO BE SOLVED: To provide a laser element that has an extremely small amount of unevenness and comprises a nitride semiconductor having a resonance surface being close to a mirror, and to provide a manufacturing method of the resonance surface of the laser element. SOLUTION: The cleavage surface of one kind of orientation out of face 1 (1/100), face 2 (10/10), face 3 (01/10), face 4 (/1100), face 5 (/1010), and face 6 (0/100) of a nitride semiconductor is set to be at least one resonance surface, thus providing the resonance surface close to a mirror.
申请公布号 JP2003017792(A) 申请公布日期 2003.01.17
申请号 JP20020170643 申请日期 2002.06.11
申请人 NICHIA CHEM IND LTD 发明人 SUGIMOTO YASUNOBU;NAKAMURA SHUJI
分类号 H01S5/02;H01S5/343;(IPC1-7):H01S5/02 主分类号 H01S5/02
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