| 摘要 |
PROBLEM TO BE SOLVED: To provide a gallium nitride-based semiconductor light-emitting element, composed of a gallium nitride-based multi-beam semiconductor laser element. SOLUTION: The GaN-based multi-beam semiconductor laser element 10 is provided with a GaN-based laminated structure 14 on a stepped substrate 12. The projecting sections 16A and 16B of the substrate 12 respectively have identical height and widths WA and WB, which are narrower than the width WA. On the substrate 12. In concentration in the sections of a GaInN active layer 22 above the projecting sections 16A and 16B becomes lower in the portions near both end sections of the projecting sections 16A and 16B, as compared with the sections of the layer 22 above the flat surfaces of the substrate 12. Since the projecting section 16A has the broader width WA than the other projecting section 16B has, the influence on In concentration over the whole region of an active region 36A is small, even when the In concentration above both end sections of the projecting section 16A becomes lower, while when the In concentration above both end sections of the projecting section 16B decreases, the influence on In concentration in the whole region of an active region 36B becomes larger and In concentration in the active region 36B becomes lower than that in the active region 36A above the projecting section 16A. Consequently, the laser light B, emitted from the active region 36B, becomes shorter in wavelength than the laser light A emitted from the active region 36A.
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