| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which prevents poor connection between conducting films via an insulation film and implementing good connection between respective conductor films on a substrate. SOLUTION: The semiconductor device comprises a first conductive film formed on a substrate 6, and a second conductive film 9 which is formed above the first conductive film 1 via the first conductive film 7 and second conductive film 8. Portions of the conductive films 7 and 8 are opened, the first conductive film 1 and second conductive film 9 are connected via the opening 2, and a region is provided in the opening 2 where the first conductive film 1 and second conductive film 9 do not overlap each other.
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