| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a high-quality III-V compound semiconductor with high reproducibility. SOLUTION: In a method of manufacturing a III-V compound semiconductor expressed by the general expression Inx Gay Alz N (x+y+z=1, 0<=x<=1, 0<=y<=1, 0<=z<=1) formed by organic metal vapor phase deposition method, (1) an In material is supplied before and/or after the III-V compound semiconductor is grown. (2) In the method described in (1), the In material is trimethly indium. The compound is a III-V compound semiconductor manufactured by the method described in either (1) or (2) (3). (4) The display unit is a display manufactured, using the III-V compound semiconductor described in (3).
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