| 摘要 |
PROBLEM TO BE SOLVED: To provide a photodetector semiconductor device which is manufactured at a low cost and superior in sensitivity to the light of short wavelengths. SOLUTION: For instance, a photodetector semiconductor device 2 is built in an optical disk drive, receives the reflected light from an optical disk, and generates electric signals. A semiconductor chip 14 containing a photo-electric conversion element (e.g. PIN photodiode) is housed in a transparent resin package through a transfer molding method. An antireflection coating film 4 is formed on all the surface of the package 12 in front of the semiconductor chip 4. The antireflection coating film 4 is formed by laminating a silicon oxide film and a silicon nitride film as thick as a few tens of nm and has a function to reduce light of wavelength 400 nm or so in reflectivity. By this setup, incident light can be made to impinge effectively on the photo-electric conversion element, so that the conversion element can be improved in sensitivity. |
