发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device enlarging the shape of individual capacitors by eliminating a dead space in arrangement of the capacitors. SOLUTION: The semiconductor device is provided with the capacitors 14 extending upward from the upper face of each storage node contact 9 and formed so as to have a substantially elliptical cross sectional shape. The arrangement of the capacitors 14 seen from upward forms a capacitor row arranging a plurality of the capacitors 14 at regular intervals along the direction of a substantially elliptical long axis. When one arbitrary capacitor row is noticed as a first capacitor row, an adjacent second capacitor row is arranged in parallel and the first capacitor row and the second capacitor row have a difference deviating only a distance corresponding to a sum of one width of a transfer gate 2 in a phase arranging the capacitors and one width of a gap making the transfer gate.
申请公布号 JP2003017589(A) 申请公布日期 2003.01.17
申请号 JP20010198906 申请日期 2001.06.29
申请人 MITSUBISHI ELECTRIC CORP 发明人 NARIMATSU KOICHIRO;SHIRATAKE SHIGERU
分类号 H01L27/108;H01L21/02;H01L21/8242;H01L27/02 主分类号 H01L27/108
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