发明名称 |
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device enlarging the shape of individual capacitors by eliminating a dead space in arrangement of the capacitors. SOLUTION: The semiconductor device is provided with the capacitors 14 extending upward from the upper face of each storage node contact 9 and formed so as to have a substantially elliptical cross sectional shape. The arrangement of the capacitors 14 seen from upward forms a capacitor row arranging a plurality of the capacitors 14 at regular intervals along the direction of a substantially elliptical long axis. When one arbitrary capacitor row is noticed as a first capacitor row, an adjacent second capacitor row is arranged in parallel and the first capacitor row and the second capacitor row have a difference deviating only a distance corresponding to a sum of one width of a transfer gate 2 in a phase arranging the capacitors and one width of a gap making the transfer gate. |
申请公布号 |
JP2003017589(A) |
申请公布日期 |
2003.01.17 |
申请号 |
JP20010198906 |
申请日期 |
2001.06.29 |
申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
NARIMATSU KOICHIRO;SHIRATAKE SHIGERU |
分类号 |
H01L27/108;H01L21/02;H01L21/8242;H01L27/02 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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