| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an insulation film of a low dielectric constant and high mechanical strength. SOLUTION: This semiconductor device is provided with the insulation film, provided with a porus structure formed on the surface of a substrate and consisting of the holes of three-dimensional network structure.</p> |
| 申请公布号 |
JP2003017483(A) |
申请公布日期 |
2003.01.17 |
| 申请号 |
JP20010198943 |
申请日期 |
2001.06.29 |
| 申请人 |
ROHM CO LTD |
发明人 |
NISHIYAMA NORIKAZU;KAMIYAMA KOREICHI;OKU YOSHIAKI |
| 分类号 |
H01L21/768;H01L21/316;H01L21/8246;H01L23/522;H01L27/105;(IPC1-7):H01L21/316 |
主分类号 |
H01L21/768 |
| 代理机构 |
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