| 摘要 |
PROBLEM TO BE SOLVED: To overcome the problem of an ashing rate slowing down, when using the same vessel as that for etching, and residues remaining, when using an etching container for ashing, as it is. SOLUTION: The etching and ashing apparatus 1 has an upper electrode 11 in a chamber 2, a susceptor 4 that is facingly provided at the lower section and places a wafer W, first and second high-frequency power supplies 20 and 22 for applying first and second high-frequency power to the upper electrode 11 and the susceptor 4, and a treatment gas supply source 16 for supplying gases for ashing and etching. In the ashing or etching, the etching and ashing apparatus 1 applies high-frequency power to the upper electrode 11 from the first high-frequency power supply 20, and at the same time, applies this to the susceptor 4 from the second high-frequency power supply 22.
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