SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide an insulation film of a low dielectric constant and high mechanical strength, and to provide a semiconductor device capable of reducing both of a capacity between wiring layers and a capacity between wires, even if in refining and high integration of the semiconductor device. SOLUTION: The semiconductor comprises the inorganic insulation film of porus structure formed on the surface of a substrate and comprising at least on supporting a single support body in an air hole inside.