| 摘要 |
PROBLEM TO BE SOLVED: To simultaneously perform both a high yield and a low manufacturing cost in the case of manufacturing a semiconductor device in which an insulated gate field effect transistor and a bipolar transistor are formed on a common semiconductor base. SOLUTION: A method for manufacturing the semiconductor device comprises a step of forming an epitaxial layer 35a as a base layer of the bipolar transistor, in a state in which a gate electrode 31 of the insulated gate field effect transistor having at least a compound film of a high melting point metal is covered with a diffusion preventive film 57 of the high melting point metal. Thus, the layer 35a can be formed in a state in which an exposed surface of the semiconductor base is not contaminated by the high melting point metal without depending upon a forming time and forming method of the compound film of the high melting point metal included in the electrode 31, and a base layer having no current leakage between a collector and an emitter can be formed.
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