摘要 |
<p>PROBLEM TO BE SOLVED: To provide a TFT substrate, a liquid crystal display device, and methods of manufacturing them. SOLUTION: Anα-Si TFT substrate 1 is equipped with a gate electrode 4, a gate insulating film 6, anα-Si:H(i) film 8, a channel protective layer 10, anα-Si:H(n) film 12, source/drain electrodes 14 and 15, a source/drain insulating film 16, a metal thin film buffer layer 18, and a transparent electrode 20 which are all formed on a board 2. The metal buffer film 18 and the transparent conductive film 20 are formed on the source/drain electrodes 14 and 15, and then subjected to etching for the formation of the metal thin film buffer layer 18 and the transparent electrode 20. The source/drain electrode 15 is prevented from coming into direct contact with the transparent conductive film in a through-hole 22 by the metal buffer film 18, so that aluminum contained in the electrode 15 is hardly oxidized, and the electrode 15 is restrained from increasing in contact resistance.</p> |