发明名称 TFT SUBSTRATE, LIQUID CRYSTAL DISPLAY DEVICE USING THE SAME, AND ITS MANUFACTURING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To provide a TFT substrate, a liquid crystal display device, and methods of manufacturing them. SOLUTION: Anα-Si TFT substrate 1 is equipped with a gate electrode 4, a gate insulating film 6, anα-Si:H(i) film 8, a channel protective layer 10, anα-Si:H(n) film 12, source/drain electrodes 14 and 15, a source/drain insulating film 16, a metal thin film buffer layer 18, and a transparent electrode 20 which are all formed on a board 2. The metal buffer film 18 and the transparent conductive film 20 are formed on the source/drain electrodes 14 and 15, and then subjected to etching for the formation of the metal thin film buffer layer 18 and the transparent electrode 20. The source/drain electrode 15 is prevented from coming into direct contact with the transparent conductive film in a through-hole 22 by the metal buffer film 18, so that aluminum contained in the electrode 15 is hardly oxidized, and the electrode 15 is restrained from increasing in contact resistance.</p>
申请公布号 JP2003017706(A) 申请公布日期 2003.01.17
申请号 JP20010200710 申请日期 2001.07.02
申请人 IDEMITSU KOSAN CO LTD 发明人 INOUE KAZUYOSHI;MATSUZAKI SHIGEO
分类号 G02F1/1345;G02F1/1362;G02F1/1368;G09F9/30;H01L21/28;H01L21/3205;H01L23/52;H01L29/417;H01L29/45;H01L29/786;(IPC1-7):H01L29/786;H01L21/320;G02F1/136;G02F1/134 主分类号 G02F1/1345
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