| 摘要 |
PROBLEM TO BE SOLVED: To allow a current to evenly flow across the entire device region of a semiconductor element so that the skin effect that follows the supply of a high frequency current is reduced. SOLUTION: A first semiconductor layer 102 is divided into eight fan-like islands 116, and an oxide film 118 is selectively formed on the surface of each island 116. Here, the island 116 in which the oxide film 118 is formed in an outer half of the fan is arranged to adjoin the island 116 in which the oxide film 118 is formed in the inner half of the fan. Many oxide films 122 are selectively formed on the rear surface of the first semiconductor layer 102 as well. The eight oxide films 118 formed on the front surface of the first semiconductor layer 102 do not agree with the eight oxide films 122 formed on the rear surface of the first semiconductor layer 102 in terms of plane. So, an electrical contact 120 on the front surface of the first semiconductor layer 102 and an electrical contact 124 on the rear surface of it are arrayed in zigzag.
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