| 摘要 |
PROBLEM TO BE SOLVED: To form a silicide film on only a gate electrode in a DRAM cell area by forming a salicide structure in a logic circuit area. SOLUTION: The gate electrode 15 containing silicon is formed through a gate insulating film 14 on a substrate 11, an N type dispersion layer 17 being a source and drain area of a transistor is formed, a silicon oxidation film 18 is deposited on the whole face, furthermore after a photoresist film is formed, it is left in only a memory cell area, the silicon oxidation film 18 is etched by an RIE method, the silicon oxidation film 18 on a gate electrode upper part and in the neighborhood thereof is removed in the memory cell area, left on the side wall of the gate electrode in a peripheral circuit area, after the photoresist film is removed, a metal silicide film 21 is formed on the upper face of the gate electrode 15 and the surface of an N type dispersion layer 20 in the peripheral circuit area, and the metal silicide film 21 is formed on the upper part of the gate electrode 15 in the memory cell area. |
