发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To solve the problem that, when a semiconductor device is constituted of a semiconductor chip size, it is feared of a damage of an element in the case of rewiring on an element region of the chip. SOLUTION: The semiconductor device comprises a conductor wiring layer 12 having grooves 10 arriving at electrode pads 8 on a front surface at a rear surface of the semiconductor chip 9 and forming a conductor wiring layer 12 electrically connected via the grooves 10, and a wiring pattern having no influence to an element region of the chip 9 provided on the rear surface side by rewiring on the chip rear surface side. Thus, in the case of mounting the semiconductor device on a mounting substrate, it is not feared to damage the element region.</p>
申请公布号 JP2003017620(A) 申请公布日期 2003.01.17
申请号 JP20010203023 申请日期 2001.07.04
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 SAWARA RYUICHI
分类号 H01L23/52;H01L21/3205;H01L23/12;(IPC1-7):H01L23/12;H01L21/320 主分类号 H01L23/52
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