| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that has a minute structure that prevents variations in the dimensions of a peripheral oxide film or the like, and cannot be achieved merely by lithography, even in removal of a reflection prevention film and a mask pattern, and to provide a method for manufacturing the semiconductor device. SOLUTION: The method includes a process for forming a base film 31 of silicon or a silicon compound film on a semiconductor substrate 1, a process for forming a hard film 4 of a metal or metal compound film on the base film, a process for forming a resist pattern 11 on the hard film, a process for forming a hard pattern 4a by allowing the hard film to be subjected to dry etching with the resist pattern as a mask, a process for making the base film subjected to dry etching with the hard pattern as a mask, and a process for removing a hard pattern by wet etching using chemical liquid, that at least will not etch the base film.
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