| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus for etching the side of a semiconductor wafer, where the etching speed of the other side of a wafer outer- periphery section is increased, and the boundary of etching at the other-surface side of the wafer outer-periphery section becomes sharp. SOLUTION: At a back-surface side on the outer-periphery section of a silicon wafer W, negative pressure is utilized, and the vapor of etching liquid is discharged along the wafer outer-periphery section, thus allowing the flow velocity to speed up, increasing etching speed at the back-surface side of the outer- periphery section of the silicon wafer W, and hence reducing cycle time in the etching as compared with a case, when etching is merely made according to the updraft of vapor from an etching liquid surface. Additionally, the vapor is discharged forcedly, along the outer-periphery section of the silicon waver W in this manner, thus making sharp the boundary of etching in an entire region at the back-surface side of the outer-periphery section of the silicon wafer W.
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