SUBSTRATE TREATING DEVICE AND SUBSTRATE TREATING METHOD, SUBSTRATE FLATTENING METHOD,申请号WO2002JP06737-传众专利搜索

发明名称	SUBSTRATE TREATING DEVICE AND SUBSTRATE TREATING METHOD, SUBSTRATE FLATTENING METHOD
摘要	A substrate treating device comprising a treating space provided with a holding table for holding an untreated substrate, a hydrogen catalyst member disposed in the treating space so as to face the untreated substrate, for decomposing hydrogen molecules into hydrogen radicals H&ast;, and a gas supply port provided on the side facing the untreated substrate of the hydrogen catalyst member in the treating space, for introducing a treating gas containing at least hydrogen gas, wherein the distance between the hydrogen catalyst member and the untreated substrate on the holding table is set to be within the hydrogen radial H&ast; reaching distance&period;
申请公布号	WO03005435(A1)	申请公布日期	2003.01.16
申请号	WO2002JP06737	申请日期	2002.07.03
申请人	OHMI, TADAHIRO;TOKYO ELECTRON LIMITED;SUGAWA, SHIGETOSHI;HIRAYAMA, MASAKI;GOTO, TETSUYA	发明人	OHMI, TADAHIRO;SUGAWA, SHIGETOSHI;HIRAYAMA, MASAKI;GOTO, TETSUYA
分类号	H01L21/00;H01L21/30;H01L21/324;H01L21/336;H01L21/77;H01L21/84;H01L29/786	主分类号	H01L21/00
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