| 摘要 |
A high-power light-emitting diode array wherein an epitaxial layer prepared by accumulating a plurality of crystal layers is formed on a substrate 1, a plurality of light-emitting diode sections 10, which have been insulated and divided, is contained, and each surface of light-emitting part 12a of the light-emitting diode sections 10 is covered with protective films (11, 14) is characterized in that a total thickness of the protective films covering each surface of light-emitting part 12a of the plurality of light-emitting diode sections 10 is allowed to be 1 mum or thinner.
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