发明名称 Method for manufacturing a semiconductor device and a plating apparatus and a sputtering apparatus therefor
摘要 An apparatus for plating a substrate includes plural plating baths that are each separately provided with (a) an individual temperature adjuster that includes a heater, a cooling jacket, and a temperature controller, or (b) an individual pressure application device for distorting the substrate.
申请公布号 US2003010632(A1) 申请公布日期 2003.01.16
申请号 US20020237657 申请日期 2002.09.10
申请人 NEC CORPORATION 发明人 UENO KAZUYOSHI
分类号 C25D7/12;C23C14/34;C23C14/50;H01L21/203;H01L21/28;H01L21/285;H01L21/288;H01L21/768;H01L23/522;(IPC1-7):C23C14/32 主分类号 C25D7/12
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