发明名称 |
Semiconductor integrated circuit device |
摘要 |
A semiconductor integrated circuit device is a voltage boosting circuit for amplifying a voltage inputted thereto and outputting the amplified voltage and has a plurality of capacitors and a plurality of intrinsic MIS transistors. Of the plurality of MIS transistors, at least one has a gate length different from the respective gate lengths of the other MIS transistors.
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申请公布号 |
US2003011419(A1) |
申请公布日期 |
2003.01.16 |
申请号 |
US20020166676 |
申请日期 |
2002.06.12 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 1006, OAZA KADOMA, |
发明人 |
MORIYAMA YOSHIYA |
分类号 |
G11C16/06;H02M3/07;(IPC1-7):G05F1/10 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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