Non-volatile floating trap storage device comprises a semiconductor substrate, a tunnel insulation layer on the substrate, a charge storage layer, a barrier insulation layer, and a gate electrode

摘要

Non-volatile floating trap storage device comprises a semiconductor substrate (10); a tunnel insulation layer (110) having a first dielectric constant on the substrate; a charge storage layer (112); a barrier insulation layer having a second dielectric constant which is larger than the first constant; and a gate electrode (117g). An Independent claim is also included for a process for the production of the non-volatile floating trap storage device. Preferred Features: The device further comprises a pair of impurity site doped layers in the substrate next to opposite lying sides of the gate electrode. The tunnel insulation layer contains silicon oxide. The blocking insulation layer comprises a metal oxide material doped with a group IV element, preferably zirconium (Zr), silicon (Si), titanium (Ti) or hafnium (Hf). The blocking insulation layer is made from alumina (Al2O3), tantalum pentoxide (Ta2O5), titania (TiO2), lead zirconate titanate (PZT), lead titanate (PbTiO3), lead zirconate (PbZrO3), lanthanum (La)-doped PZT, lead oxide (PbO), strontium titanate (SrTIO3), barium titanate (BaTiO3), BST, SBT or bismuth titanate (Bi4Ti3O12).