发明名称 |
Semiconductor component with a charge compensation structure and associated fabrication methods |
摘要 |
A semiconductor component includes a charge compensation structure wherein locations with a maximum local field strength are positioned in a compensation edge region of the charge compensation structure. Thus, an electrical parameter such as the on resistance of the semiconductor component can be substantially improved without influencing or impairing further parameters such as the breakdown voltage and the robustness with respect to TRAPATT oscillations. Methods of fabricating a semiconductor component with a charge compensation structure are also provided.
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申请公布号 |
US2003011039(A1) |
申请公布日期 |
2003.01.16 |
申请号 |
US20020190119 |
申请日期 |
2002.07.03 |
申请人 |
AHLERS DIRK;DEBOY GERALD;WEBER HANS;WILLMEROTH ARMIN |
发明人 |
AHLERS DIRK;DEBOY GERALD;WEBER HANS;WILLMEROTH ARMIN |
分类号 |
H01L21/336;H01L23/58;H01L29/06;H01L29/76;H01L29/78;H01L29/94;H01L31/062;H01L31/113;H01L31/119;(IPC1-7):H01L23/58 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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