| 摘要 |
A method of producing a strain-relaxed Si-Ge virtual substrate for use in a semiconductor substrate which is planar and of less defects for improving the performance of a field effect semiconductor device, which method comprises covering an Si-Ge layer formed on an SOI substrate with an insulating layer to prevent evaporation of Ge, heating the mixed layer of silicon and germanium at a temperature higher than a solidus curve temperature determined by the germanium content of the Si-Ge layer into a partially melting state, and diffusing germanium to the Si layer on the insulating layer, thereby solidifying the molten Si-Ge layer to obtain a strain-relaxed Si-Ge virtual substrate.
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