发明名称 |
Semiconductor device and method for fabricating same |
摘要 |
A semiconductor device includes a semiconductor substrate having a trench in its surface, an insulating film in the trench, a doped conductive layer on the insulating film, a gate insulation film and a gate electrode on the doped conductive layer over the trench, and source and drain impurity regions in the surface of the semiconductor substrate at sides of the gate electrode.
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申请公布号 |
US2003013256(A1) |
申请公布日期 |
2003.01.16 |
申请号 |
US20020242765 |
申请日期 |
2002.09.13 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., |
发明人 |
CHEONG YEON WOO;BACK YOUNG KUM |
分类号 |
H01L21/334;H01L29/10;(IPC1-7):H01L29/76;H01L21/336;H01L31/062 |
主分类号 |
H01L21/334 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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