| 摘要 |
<p>A method for forming a film having a low dielectric constant, characterized in that it comprises the steps of generating a plasma in a chamber for forming a film, reacting a nitrogen atom with boron and carbon in the chamber to thereby form a boron-carbon-nitrogen film on a substrate, and then holding the formed film to have an elevated temperature of 250 to 550 ˚ C; and an apparatus for practicing the method. The method allows the formation of a boron-carbon-nitrogen film having an extremely low dielectric constant.</p> |
