发明名称 METHOD FOR MANUFACTURING REAR-FACIAL BURIED CONTACT SOLAR CELL
摘要 <p>PURPOSE: A method for manufacturing a rear-facial buried contact solar cell is provided to increase the collection efficiency of carrier and to form effective rear-facial electric field by forming a contact in a deep groove. CONSTITUTION: After forming a pyramid structure on a front surface of a P-type semiconductor substrate(1), PN junction is formed by emitter diffusion. An oxide layer(5) is formed on the front and rear surface of the P-type semiconductor substrate(1). A positive groove is formed on one predetermined portion of the rear surface of the semiconductor substrate. A P+-type layer(3) is formed in the positive groove. A negative groove is formed on the other predetermined portion of the rear surface of the semiconductor substrate. An N+-type layer(2) is formed in the negative groove. A bottom electrode(4) is formed in the positive and negative groove by plating a conductive metal.</p>
申请公布号 KR100370410(B1) 申请公布日期 2003.01.16
申请号 KR19960000305 申请日期 1996.01.09
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JI, IL HWAN;KIM, DONG SEOP;LEE, SU HONG
分类号 H01L31/04;H01L31/0224;H01L31/06;H01L31/18;(IPC1-7):H01L31/04 主分类号 H01L31/04
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