发明名称 EXHAUST GAS PRETREATING METHOD AND EXHAUST GAS PRETREATING DEVICE AND DEDUSTING DEVICE USED THEREFOR
摘要 A pretreating process for exhaust gas produced in a semiconductor or liquid crystal module production device such as a film forming device, wherein a maintenance work is restricted or safety of the work is improved. A pretreating method for a film−forming exhaust gas containing Si components, comprising the steps of burning and treating an exhaust gas, dedusting Si−containing dust from a combustion exhaust gas produced in the burning step, cleaning by water the dedusted combustion exhaust gas. This method that removes Si−containing dust in the dedusting process can restrict the precipitation of precipitates during the cleaning step, whereby ensuring a stable treating process, alleviating maintenance work, and conducting a cleaning process without requiring a large amount of cleaning water.
申请公布号 WO03004133(A1) 申请公布日期 2003.01.16
申请号 WO2002JP06726 申请日期 2002.07.03
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;MATSUSHITA ENVIRONMENT AIRCONDITIONING ENGINEERINGCO., LTD. 发明人 AIKO, MASAHIKO;HAYASHI, KAZUYUKI;TSUCHIMOTO, TOSHIAKI;SAWADA, HIROAKI;NAKAGAWA, AKIO
分类号 F23J15/04;B01D46/04;B01D53/34;B01D53/68;B01D53/77;F23G7/06;(IPC1-7):B01D46/04;B01D47/06;F23J15/00 主分类号 F23J15/04
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