EXHAUST GAS PRETREATING METHOD AND EXHAUST GAS PRETREATING DEVICE AND DEDUSTING DEVICE USED THEREFOR
摘要
A pretreating process for exhaust gas produced in a semiconductor or liquid crystal module production device such as a film forming device, wherein a maintenance work is restricted or safety of the work is improved. A pretreating method for a film−forming exhaust gas containing Si components, comprising the steps of burning and treating an exhaust gas, dedusting Si−containing dust from a combustion exhaust gas produced in the burning step, cleaning by water the dedusted combustion exhaust gas. This method that removes Si−containing dust in the dedusting process can restrict the precipitation of precipitates during the cleaning step, whereby ensuring a stable treating process, alleviating maintenance work, and conducting a cleaning process without requiring a large amount of cleaning water.
申请公布号
WO03004133(A1)
申请公布日期
2003.01.16
申请号
WO2002JP06726
申请日期
2002.07.03
申请人
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;MATSUSHITA ENVIRONMENT AIRCONDITIONING ENGINEERINGCO., LTD.