| 发明名称 |
POWER MOSFET WITH DEEP IMPLANTED JUNCTIONS |
| 摘要 |
A MOS-gated semiconductor device is shown and described which includes deep implanted junctions (92) and thick oxide spacers disposed over a substantial portion of common conduction regions. |
| 申请公布号 |
WO03005414(A2) |
申请公布日期 |
2003.01.16 |
| 申请号 |
WO2002US21127 |
申请日期 |
2002.07.02 |
| 申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
SPRING, KYLE;CAO, JIANJUN |
| 分类号 |
H01L29/423;H01L21/28;H01L21/336;H01L29/06;H01L29/10;H01L29/49;H01L29/78 |
主分类号 |
H01L29/423 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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