CHEMICAL MECHANICAL POLISHING SLURRY FOR SEMICONDUCTOR INTEGRATED CIRCUIT,POLISHING METHOD AND SEMICONDUCTOR INTEGRATED CIRCUIT

摘要

A chemical mechanical polishing slurry which comprises (a) water, (b) polishing grains in an amount of 0.01 to 30 mass % and (c) an anthranilic acid copper chelate and/or a quinaldinic acid copper chlate in an amount of 0.05 to 10 mass % in terms of anthranilic acid and/or a quinaldinic acid; and a method for polishing a semiconductor integrated circuit having copper wiring which comprises using the chemical mechanical polishing slurry. The polishing slurry allows the solution of the dishing problem associated with the flatting processing by the chemical mechanical polishing method for a semiconductor integrated circuit, in a field of a circuit having copper wiring for which the commercial need is increasing.