发明名称 |
Optically detectable alignment marks producing an enhanced signal-amplitude change from scanning of a detection light over the alignment mark, and associated alighment-detection methods |
摘要 |
Alignment marks are disclosed that provide, when scanned by a detection-light beam, an enhanced signal-amplitude change. Such an alignment mark is formed on a mark substrate and is used for performing an alignment in a charged-particle-beam (CPB) microlithography system. The alignment mark includes at least one mark element defined as a corresponding height-difference characteristic in the mark substrate. The mark element includes more than two height-difference edges that would be encountered by a detection-light beam being scanned across the element. The height-difference edges of the element can be defined by multiple individual mark-element components that collectively provide the more than two height-difference edges of the mark element. Alternatively, for example, the element can include two height-difference edges at respective edges of the mark element and at least one height-difference edge situated between the two height-difference edges at respective edges of the mark element. The alignment mark is suitable for detection by an optical alignment-detection device of a CPB microlithography system. |
申请公布号 |
US2003010936(A1) |
申请公布日期 |
2003.01.16 |
申请号 |
US20020188580 |
申请日期 |
2002.07.03 |
申请人 |
NIKON CORPORATION |
发明人 |
UDAGAWA JIN;HIRAYANAGI NORIYUKI |
分类号 |
G03F1/08;G03F1/16;G03F1/20;G03F1/42;G03F7/20;G03F9/00;H01J37/304;H01L21/027;(IPC1-7):G21K5/10;H01J37/08 |
主分类号 |
G03F1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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