| 摘要 |
<p>An α-Si TFT substrate (1) comprising a base (2), a gate electrode (4), a gate insulating film (6), an α-Si:H(i) film (8), a channel protective layer (10), an α-Si:H(n) film (12), source/drain electrodes (14, 15) made mainly of metal aluminum, a source/drain insulating film (16), a metal thin-film buffer layer (18), and a transparent electrode (20). The electrodes, films, layers are formed on the base (2). A metal buffer film (18) and a transparent conductive film (20) are formed over the source/drain electrodes (14, 15) and etched simultaneously so as to form the metal thin-film buffer layer (18) and the transparent electrode (20). In a through hole (22), the source/drain electrodes (14, 15) are out of direct contact with the transparent conductive film (20) because of the presence of the metal buffer film (18), and therefore aluminum in the electrode (15) is not oxidized. As a result, the contact resistance is not high. Thus, a TFT substrate stably operable, a liquid crystal display, and its efficient manufacturing method are provided.</p> |
