发明名称 THIN FILM FORMING METHOD AND THIN FILM FORMING DEVICE
摘要 <p>A vapor-deposition process for depositing TiO2 and a vapor deposition process for depositing SiO2 are alternately repeated in a multi-layer film forming process. A refractive index that a thin film formed by each vapor-depositing will provide is individually determined prior to each relative vapor-depositing, and vapor-deposition control data is prepared based on such a refractive index. Each vapor-deposition is controlled by using a relative vapor-deposition control data thus prepared. Therefore, each vapor-deposition process can be accurately controlled according to the refractive index of a thin film even if repeated vapor-deposition processes change the refractive index. Accordingly, a multi-layer film having desired optical characteristics can be formed.</p>
申请公布号 WO2003005077(P1) 申请公布日期 2003.01.16
申请号 JP2002006729 申请日期 2002.07.03
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