发明名称 METHOD OF SHALLOW TRENCH ISOLATION USING A SINGLE MASK
摘要 A method of shallow trench isolation includes preparing a substrate, including forming mesa structures thereon; forming a barrier cap on the mesa structures; forming an oxide multi-layer structure over the mesas and barrier caps, including: depositing a first oxide layer having a conventional polishing rate; depositing a second oxide layer having a low polishing rate; and depositing a third oxide layer having a conventional polishing rate; and polishing the structure to the level of the barrier cap.
申请公布号 US2003013293(A1) 申请公布日期 2003.01.16
申请号 US20010906899 申请日期 2001.07.16
申请人 EVANS DAVID R.;HSU SHENG TENG 发明人 EVANS DAVID R.;HSU SHENG TENG
分类号 H01L21/76;H01L21/304;H01L21/3105;H01L21/762;(IPC1-7):H01L21/476 主分类号 H01L21/76
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