发明名称 |
METHOD OF SHALLOW TRENCH ISOLATION USING A SINGLE MASK |
摘要 |
A method of shallow trench isolation includes preparing a substrate, including forming mesa structures thereon; forming a barrier cap on the mesa structures; forming an oxide multi-layer structure over the mesas and barrier caps, including: depositing a first oxide layer having a conventional polishing rate; depositing a second oxide layer having a low polishing rate; and depositing a third oxide layer having a conventional polishing rate; and polishing the structure to the level of the barrier cap.
|
申请公布号 |
US2003013293(A1) |
申请公布日期 |
2003.01.16 |
申请号 |
US20010906899 |
申请日期 |
2001.07.16 |
申请人 |
EVANS DAVID R.;HSU SHENG TENG |
发明人 |
EVANS DAVID R.;HSU SHENG TENG |
分类号 |
H01L21/76;H01L21/304;H01L21/3105;H01L21/762;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/76 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|