METHOD FOR CONTACTING A DOPING AREA ON A SEMICONDUCTOR ELEMENT
摘要
The invention relates to a method for contacting a doping area (3) which is formed on the surface (2) of a substrate (1). According to the invention, an isolating layer (5) is applied to the surface of the substrate (2) and a contact hole (16) is formed in the isolating layer (5). Subsequently, a layer containing metal (6) is placed on the isolating layer (5) and the surface area (4) of the doping area (3) which is bared by means of a contact hole (16). A two-stepped temperature process then follows, whereby in the first step the layer containing metal (6) is reacted with the silicon of the doping area (3) in order to obtain a metal silicon layer (7), and subsequently in the second temperature step the remaining layer containing metal (6) is transformed into a layer (8) containing metal nitrides.
申请公布号
WO02054470(A3)
申请公布日期
2003.01.16
申请号
WO2001DE04590
申请日期
2001.12.06
申请人
INFINEON TECHNOLOGIES AG;RUF, ALEXANDER;URBANSKY, NORBERT;CLAUSSEN, WILHELM;GAERTNER, THOMAS;SCHMIDBAUER, SVEN
发明人
RUF, ALEXANDER;URBANSKY, NORBERT;CLAUSSEN, WILHELM;GAERTNER, THOMAS;SCHMIDBAUER, SVEN