| 摘要 |
A homogeneously doped silicon is produced by mixing in the liquid phase a halogen compound of silicon consisting of a silicon halide or or halosilane with a halide of a doping element of Group III or V of the Periodic System having a boiling point differing by not more than 50 DEG C. from that of the silicon halogen compound, evaporating the liquids by passing a carrier gas through them at such a rate that the ratio of silicon to doping element in the residual liquid remains constant and passing the gas mixture over the surface of a carrier of silicon heated to a temperature such that silicon and the doping element are deposited from the gas on to the surface of the carrier. The carrier may be silicon doped with the doping element and the ratio of silicon halogen compound to the doping element halide in the liquid is so adjusted, by determinations of the extent of doping of deposited silicon obtained with liquid mixtures of known concentrations, that the extent of doping of the deposited silicon e.g. as a monocrystal is the same as that of the carrier e.g. a monocrystal. The carrier gas may be hydrogen. The gaseous mixture e.g. SiCl4 or SiHCl3 may contain a hydrogen halide, e.g. HCl. The doping substance may be PCl3, POCl3, AsCl3 or BBr3. Specifications 795,191, 809,250, 812,818, 926,807 and 960,893 are referred to.ALSO:A homogeneously doped germanium or silicon is produced by mixing in the liquid phase a halogen compound of germanium or silicon consisting of a germanium halide or halogermane or a silicon halide or halosilicone with a halide of a doping element of Group III or V of the Periodic System having a boiling point differing by not more than 50 DEG C. from that of the germanium halogen compound, evaporating the liquids by passing a carrier gas through them at such a rate that the ratio of germanium to doping element in the residual liquid remains constant and passing the gas mixture over the surface of a carrier of germanium heated to a temperature such that germanium and the doping element are deposited from the gas on to the surface of the carrier. The carrier may be germanium doped with the doping element and the ratio of germanium halogen compound to the doping element halide in the liquid is so adjusted, by determinations of the extent of doping of deposited germanium obtained with liquid mixtures of known concentration, that the extent of doping of the deposited germanium e.g. as a monocrystal is the same as that of the carrier e.g. a monocrystal. The carrier gas may be hydrogen. The gaseous mixture e.g. GeCl4 or GeHCl3 may contain a hydrogen halide e.g. HCl. The doping substance may be PCl3, POCl3, AsCl3 or BBr3. Specifications 795,191, 809,250, 812,818, 926,807 and 960,893 are referred to. |
