发明名称 |
METHOD OF IMPROVING GATE ACTIVATION BY EMPLOYING ATOMIC OXYGEN ENHANCED OXIDATION |
摘要 |
The present invention provides a method of preparing a Si-based metal-insulator-semiconductor (MIS) transistor which prevents the polycrystalline grains of the gate conductor from getting significantly larger by reducing the thermal budget of the sidewall oxidation process. The thermal budget of the inventive sidewall oxidation process is reduced one or two orders of magnitude over conventional prior art sidewall oxidation processes by utilizing atomic oxygen as the oxidizing ambient. The present invention also provides Si-based MIS transistors having a gate conductor having grain sizes of about 0.1, preferably 0.05, mum or less.
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申请公布号 |
US2003010972(A1) |
申请公布日期 |
2003.01.16 |
申请号 |
US20010905233 |
申请日期 |
2001.07.13 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
AJMERA ATUL C.;DOKUMACI OMER H.;DORIS BRUCE B.;GLUSCHENKOV OLEG |
分类号 |
H01L21/28;H01L21/316;H01L21/321;H01L29/423;H01L29/49;H01L29/78;H01L29/786;(IPC1-7):H01L27/01;H01L29/06;H01L31/039 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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