发明名称 Composition for forming low dielectric constant insulating film, method of forming insulating film using the composition and electronic parts having the insulating film produced thereby
摘要 A composition for the formation of an insulating film comprising a low dielectric constant polymeric material and a sublimating material, which are dissolved in a solvent. Preferred low dielectric constant polymeric materials include polyaryl ethers. Preferred sublimating materials include silicone compounds having a closed stereostructure having atoms at its vertexes, such as those known as Si-T8 and Si-T12. A method of forming a low dielectric constant insulating film and electronic parts or components using an insulating film formed thereby are also disclosed.
申请公布号 US2003010961(A1) 申请公布日期 2003.01.16
申请号 US20020194318 申请日期 2002.07.15
申请人 FUJITSU LIMITED 发明人 FUKUYAMA SHUN-ICHI;OWADA TAMOTSU;INOUE HIROKO
分类号 H01L21/768;H01B3/30;H01B3/46;H01L21/31;H01L21/312;H01L23/522;H05K1/00;(IPC1-7):H01B3/24 主分类号 H01L21/768
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