发明名称 |
Composition for forming low dielectric constant insulating film, method of forming insulating film using the composition and electronic parts having the insulating film produced thereby |
摘要 |
A composition for the formation of an insulating film comprising a low dielectric constant polymeric material and a sublimating material, which are dissolved in a solvent. Preferred low dielectric constant polymeric materials include polyaryl ethers. Preferred sublimating materials include silicone compounds having a closed stereostructure having atoms at its vertexes, such as those known as Si-T8 and Si-T12. A method of forming a low dielectric constant insulating film and electronic parts or components using an insulating film formed thereby are also disclosed.
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申请公布号 |
US2003010961(A1) |
申请公布日期 |
2003.01.16 |
申请号 |
US20020194318 |
申请日期 |
2002.07.15 |
申请人 |
FUJITSU LIMITED |
发明人 |
FUKUYAMA SHUN-ICHI;OWADA TAMOTSU;INOUE HIROKO |
分类号 |
H01L21/768;H01B3/30;H01B3/46;H01L21/31;H01L21/312;H01L23/522;H05K1/00;(IPC1-7):H01B3/24 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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