| 发明名称 |
A THEORY OF THE CHARGE MULTIPLICATION PROCESS IN AVALANCHE PHOTODIODES |
| 摘要 |
An avalanche photodiode including a multiplication layer is provided. The multiplication layer includes a well region (72, 74) and a barrier region (76, 78, 80). The well region includes a material having a higher carrier ionization probability than a material used to form the barrier region. |
| 申请公布号 |
WO0227805(A3) |
申请公布日期 |
2003.01.16 |
| 申请号 |
WO2001US30775 |
申请日期 |
2001.10.01 |
| 申请人 |
BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM |
发明人 |
CAMPBELL, JOE, C.;YUAN, PING |
| 分类号 |
H01L21/00;H01L31/0328;H01L31/107;H01L31/109;H01L31/18 |
主分类号 |
H01L21/00 |
| 代理机构 |
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