发明名称 |
Negative resist production, for structurizing semiconductor substrate in microchip production, uses polymer with acid-labile groups releasing anchor groups co-ordinating with reactive groups of amplifying agent containing silicon |
摘要 |
Production of amplified negative resist structures uses a chemically amplified resist containing a polymer (IA) with acid-labile groups, which release an anchor group (AG), giving a polymer (IB) with changed polarity, a photoacid and a solvent (II). Development after selective exposure uses a developer containing a solvent for (IA) but not (IB) and an amplifying agent (III). Production of amplified negative resist structures comprises: (1) coating a substrate with a chemically amplified resist comprising a polymer (IA) with acid-labile groups, which release an anchor group (AG), giving a polymer (IB) with changed polarity, a photoacid and a solvent (II); (2) removing (II); (3) selectively exposing to liberate acid; (4) contrasting by releasing AG; (5) developing with a developer containing a solvent, in which (IA) is soluble but (IB) is largely insoluble or swellable, and an amplifying agent (III) containing reactive group(s) that can co-ordinate with AG and aromatic group(s); and (6) removing excess developer.
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申请公布号 |
DE10131487(A1) |
申请公布日期 |
2003.01.16 |
申请号 |
DE20011031487 |
申请日期 |
2001.06.29 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
ROTTSTEGGE, JOERG;KUEHN, EBERHARD;FALK, GERTRUD;SEBALD, MICHAEL |
分类号 |
G03F7/32;G03F7/40;(IPC1-7):G03F7/30 |
主分类号 |
G03F7/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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