发明名称 METHOD FOR TREATING AN IMPLANT, AND SUCH AN IMPLANT
摘要 <p>The invention relates to a method for treating an implant, and to an implant treated by said method. All or some of the outer surfaces of the implant are oxidized with a layer (la) of substantial thickness and substantial porosity or pore volume. One or more CaP layers (12) are applied to the porous surface or surface of large pore volume. Bone-growth-stimulating agents (13), for example rh-BMP-2 or rh-BMP-7, are then applied to the CaP layer. The method and the device make it possible to support a maximum quantity of bone- growth-stimulating agent, which can be controlled in respect of its release function.</p>
申请公布号 WO2003003937(A1) 申请公布日期 2003.01.16
申请号 SE2002001255 申请日期 2002.06.26
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