发明名称 CIRCUIT FOR IMPROVING NOISE IMMUNITY BY DV/DT BOOSTING
摘要 <p>A circuit for suppressing false operation of a level shift circuit (10) due to a noise transient, the circuit comprising a first transistor (103) coupled to a voltage source (VB) of the level shift circuit and being coupled to pass a current when a noise transient is present on the voltage source and an output terminal (BOOST) coupled to the first transistor providing as an injected signal a current proportional to the current in the first transistor to at least one level shift transistor of the level shift circuit to prevent false triggering of the level shift circuit due to the noise transient.</p>
申请公布号 WO2003005558(A2) 申请公布日期 2003.01.16
申请号 US2002020838 申请日期 2002.07.01
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