THIN FILM FORMING METHOD AND THIN FILM FORMING DEVICE

摘要

A vapor−deposition process for depositing TiO2 and a vapor deposition process for depositing SiO2 are alternately repeated in a multi−layer film forming process. A refractive index that a thin film formed by each vapor−depositing will provide is individually determined prior to each relative vapor−depositing, and vapor−deposition control data is prepared based on such a refractive index. Each vapor−deposition is controlled by using a relative vapor−deposition control data thus prepared. Therefore, each vapor−deposition process can be accurately controlled according to the refractive index of a thin film even if repeated vapor−deposition processes change the refractive index. Accordingly, a multi−layer film having desired optical characteristics can be formed.