SEMICONDUCTOR LASER DEVICE,SEMICONDUCTOR LASER MODULE,AND OPTICAL FIBER AMPLIFIER USING SEMICONDUCTOR LASER MODULE

摘要

A semiconductor laser device having two active layer stripe structures. A cross section of one of the stripe structures includes an n−InP substrate (1), n−InP clad layer (2), a lower GRIN−SCH layer (3b), an active layer (4b), an upper GRIN−SCH layer (5b), a p−InP clad layer (6), and a p−InGaAsP contact layer (7) formed in this order. Moreover, a high reflection film (12) is arranged at the reflection side end surface and a low reflection film (13) is arranged at the emission side end surface. On the p−InGaAsP contact layer (7), a p−side electrode (8b) is arranged partly and a non−current poured region (14) is formed at the remaining area.