| 摘要 |
A grooved channel Schottky contacted MOSFET has asymmetric source and drain regions. The MOSFET includes an undoped silicon substrate with a background doping concentration of less than about 1017 cm-3. A grooved channel is formed in a first surface of the substrate. A first metal silicide material is formed in a first side of the grooved channel, forming a source region, and a second metal silicide material is formed on a second side of the grooved channel, forming a drain region. A metal gate is formed in the grooved channel. The grooved structure allows the off-state current to be reduced to less than 50 pA/mum. Further, the feature size can be scaled down to 10 nm without strong short-channel effects (DIBL<0.063) and the gate delay (CV/I) is reduced to 2.4 ps.
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