MRAM WRITE APPARATUS AND METHOD

摘要

An MRAM cell (10) and a method of programming the cell are disclosed. The cell includes a free layer (12) of magnetic material having a ferromagnetic resonance with a resonant frequency, the ferromagnetic resonance having a Q greater than one. A hard axis and an easy axis write line are positioned in magnetic communication with the free layer. A cladding layer (62) partially surrounds the hard axis write line and has a similar resonant frequency and with a ferromagnetic resonance Q greater than one. A write signal including the resonant frequency is applied to the hard axis write line (20) and simultaneously a write pulse is applied to the easy axis write line (21). The Qs of the cell and the cladding layer multiply to substantially increase the switching magnetic field or reduce the current required to provide the same magnetic field.