发明名称 Heater arrangement for crystal growth furnace
摘要 A furnace for growing a high volume of crystals includes a plurality of individual growth stations and first and second heater matrixes. Each individual growth station has a crucible and an insulating container generally surrounding the crucible and thermally isolating the crucible from the other individual growth stations. The first and second heater matrices each include at least two legs electrically connected in parallel and each of the legs have at least two resistance heaters electrically connected in series. Each of the individual growth stations have at least one of the resistance heaters within the first heater matrix and at least one of the resistance heaters within the second heater matrix associated therewith. The resistance heaters of the first heater matrix are located above the crucibles and are preferably adapted to provide a homogeneous temperature across tops of the crucibles. The resistance heaters of the second heater matrix are preferably located below the crucible and are preferably adapted to provide a temperature gradient across bottoms the crucibles.
申请公布号 US2003010770(A1) 申请公布日期 2003.01.16
申请号 US20020219567 申请日期 2002.08.15
申请人 SCHUPP JOHN D.;HEARST DAVID T. 发明人 SCHUPP JOHN D.;HEARST DAVID T.
分类号 H05B3/00;C30B11/00;C30B29/12;C30B35/00;H05B3/62;(IPC1-7):H05B3/02 主分类号 H05B3/00
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