发明名称 APPARATUS AND METHOD FOR OBSERVING USING ELECTRON BEAM
摘要 <p>PROBLEM TO BE SOLVED: To realize an apparatus and a method for obtaining a two-dimensional distribution by measuring a distortion and a stress having a nanometer resolution of various type crystal samples using a diffraction image to be observed by an electron microscope. SOLUTION: The method for observing using an electron beam comprises the steps of irradiating the sample with the electron beam in an infinitesimal and parallel manner, measuring a distance between spots of the diffraction image reflecting a crystal structure obtained by the irradiation by a pixel detector or a position detector, and superposing and displaying the two-dimensional distribution of a stress on an enlarged image of the electron microscope together with measured position information. Accordingly, the distortion and the stress in the infinitesimal crystal can be displayed to meet the structure information of the sample at a high speed and high resolution.</p>
申请公布号 JP2003014667(A) 申请公布日期 2003.01.15
申请号 JP20010204311 申请日期 2001.07.05
申请人 HITACHI LTD 发明人 TAKAGUCHI MASANARI;NAKAMURA KUNIYASU;UMEMURA KAORU;TANIGUCHI YOSHIFUMI;ICHIHASHI MIKIO
分类号 G01N23/20;G21K5/04;H01J37/22;H01J37/295;(IPC1-7):G01N23/20 主分类号 G01N23/20
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