| 摘要 |
PURPOSE: A method for manufacturing a well in a semiconductor device is provided to be capable of simplifying manufacturing processes and improving isolation property. CONSTITUTION: After sequentially forming an oxide layer(12) and a nitride layer(13) on a substrate(11), a filed oxide layer(14) is formed at an isolation region. The first and second n-type impurity region(16,17) are sequentially formed in the substrate by using the first photoresist pattern for defining an N-well region. The first and second p-type impurity region(19,20) are sequentially formed in the substrate by using the second photoresist pattern for defining a P-well region. The remaining nitride and oxide layer are removed. Then, an N-well(21) and a P-well(22) are formed by diffusing the first and second n-type impurity region(16,17) and the first and second p-type impurity region(19,20) using an annealing process.
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