发明名称 |
POSITIVE TYPE RESIST COMPOSITION |
摘要 |
PROBLEM TO BE SOLVED: To provide a positive type resist composition suitable for use under a light source for exposure which emits light of <=160 nm, particularly F2 excimer laser light (157 nm) and specifically to provide a positive type resist composition exhibiting satisfactory transmittance when a light source which emits light of 157 nm is used and having good contrast by dissolution. SOLUTION: Each of the positive type resist compositions contains (A) a resin which has repeating units with a specified structure and is decomposed by the action of an acid to increase its solubility in an alkali developing solution, (B) a compound which generates the acid when irradiated with active light or radiation and (C) a solvent. |
申请公布号 |
JP2003015298(A) |
申请公布日期 |
2003.01.15 |
申请号 |
JP20010202241 |
申请日期 |
2001.07.03 |
申请人 |
FUJI PHOTO FILM CO LTD |
发明人 |
KANNA SHINICHI;MIZUTANI KAZUYOSHI |
分类号 |
G03F7/039;C08F212/14;C08F220/18;H01L21/027 |
主分类号 |
G03F7/039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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