发明名称 POSITIVE TYPE RESIST COMPOSITION
摘要 PROBLEM TO BE SOLVED: To provide a positive type resist composition suitable for use under a light source for exposure which emits light of <=160 nm, particularly F2 excimer laser light (157 nm) and specifically to provide a positive type resist composition exhibiting satisfactory transmittance when a light source which emits light of 157 nm is used and having good contrast by dissolution. SOLUTION: Each of the positive type resist compositions contains (A) a resin which has repeating units with a specified structure and is decomposed by the action of an acid to increase its solubility in an alkali developing solution, (B) a compound which generates the acid when irradiated with active light or radiation and (C) a solvent.
申请公布号 JP2003015298(A) 申请公布日期 2003.01.15
申请号 JP20010202241 申请日期 2001.07.03
申请人 FUJI PHOTO FILM CO LTD 发明人 KANNA SHINICHI;MIZUTANI KAZUYOSHI
分类号 G03F7/039;C08F212/14;C08F220/18;H01L21/027 主分类号 G03F7/039
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