MASK DATA GENERATING METHOD, MASK MANUFACTURING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a mask data generating method for easily confirming whether an optical proximity effect correction pattern is automatically generated or not in the prescribed part of an arbitrary layer. SOLUTION: The method has a step (a) for setting a correction pattern generation area for automatically generating a correction pattern for correcting optical proximity effect to a pattern having the width of not more than a prescribed value, a step (b) for setting a correction pattern inhibition area for inhibiting the automatic generation of the correction pattern, a step (c) for inputting data on a correction confirming pattern having the width of not more than the prescribed value in the correction pattern generation area and the inhibition area, a step (d) for inputting data on the pattern for forming the layer of a semiconductor device and a step (e) for automatically generating the correction pattern.